B1368 Overview
Description
With TO-220F package - Complement to type 2SD2060 - Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A - Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS - With general purpose applications PINNING PIN DE 1 2 3 Emitter Collector Base Fig.1 s implified o utline (TO-220F) a nd s ymbol SCRIPTION SYMBOL P VCBO VCEO VEBO IC IB ARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg S Junction temperature torage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 -0.4 2.0 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 u nless otherwise specified ARAMETER Collector-emitter breakdown voltage ollector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency ollector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-3A ;IB=-0.3A IC=-3A;VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-5V 40 IC=-3A ; VCE=-5V 15 IC=-0.5A ; VCE=-5V f=1MHz;VCB=10V MIN 80 2SB1368 SYMBOL P V(BR)CEO VCEsat C VBE ICBO IEBO hFE-1 hFE-2 fT COB C TYP. MAX UNIT V -1.0 -1.0 -1.7 -1.5 -30 -100 240 V V µA µA 9.0 130 MHz pF hFE-1 Classifications R 40-80 70O 140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1368 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1368 4.
