B631
DESCRIPTION
- With TO-126 package
- plement to type 2SD600/K
- High breakdown voltage VCEO:-100/-120V
- High current: -1A
- Low saturation voltage,excellent h FE linearity APPLICATIONS
- For low-frequency power amplifier applications ..
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL PARAMETER 2SB631 VCBO Collector-base voltage 2SB631K 2SB631 VCEO Collector-emitter voltage 2SB631K VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 8 150 -55~150 Open collector Open base -120 -5 -1 -2 1 W V A A Open emitter -120 -100 V CONDITIONS VALUE -100 V UNIT
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2SB631 IC=-1m A; RBE=@ 2SB631K 2SB631 IC=-10µA ;IE=0 2SB631K IE=-10µA ;IC=0 IC=-0.5A...
