B645 Overview
Product Specification 2SB645 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A ICBO Collector cut-off current VCB=-200V; IE=0 IEBO Emitter cut-off current hFE DC current gain fT Transition frequency VEB=-6V;.