Datasheet Details
| Part number | BD142 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 135.71 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BD142_SavantIC.pdf |
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Overview: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD142 www.datasheet4u.
| Part number | BD142 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 135.71 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BD142_SavantIC.pdf |
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·With TO-3 package ·Low collector saturation voltage ·High dissipation rating APPLICATIONS ·LF large signal power amplification ·Intended for a wide variety of intermediate power applications.
·Suited for use in audio and inverter circuits at 12V PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 45 45 7 15 7 117 -65~200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD142 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=200mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=4A ;IB=0.4A IC=4A;VCE=4V VCE=100V;VBE=-1.5V VEB=7V;
IC=0 IC=4A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD142 | NPN Silicon Transistor | Comset Semiconductors |
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BD142 | NPN Transistor | INCHANGE |
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