SavantIC BD249
SILICON POWER TRANSISTOR
DESCRIPTION
●With TO-3PN package●Complement to type BD250/A/B/C
●125 W at 25°C case temperature
●25 A continuous collector current PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter
DESCRIPTION
Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER BD249 VCEO Collector-emitter voltage BD249A BD249B BD249C BD249 VCBO Collector-base voltage BD249A BD249B BD249C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open base CONDITIONS VALUE 45 60 80 100 55 70 90 115 5 25 40 5 125 -65~150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD249/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD249 Collector-emitter breakd...