Datasheet Details
| Part number | BD318 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.80 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BD318_SavantIC.pdf |
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Overview: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD318 www.datasheet4u.
| Part number | BD318 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.80 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BD318_SavantIC.pdf |
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·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD317 APPLICATIONS ·Designed for high power amplifiers PINNING (See Fig.2) PIN DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol 1 2 3 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(peak) Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -16 -20 -5 200 -65~200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 0.875 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD318 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-0.2A ;
IB=0 IC=-8A ;IB=-0.8A IC=-8A ;IB=-0.8A IC=-8A ;VCE=-2.0V VCB=100V;IE=0 VEB=-7V;
IC=0 IC=-5A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BD318 | PNP Transistor | INCHANGE |
| Part Number | Description |
|---|---|
| BD311 | SILICON POWER TRANSISTOR |
| BD312 | SILICON POWER TRANSISTOR |
| BD317 | SILICON POWER TRANSISTOR |