Datasheet Details
| Part number | BDW83C |
|---|---|
| Manufacturer | SavantIC |
| File Size | 175.06 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BDW83C BDW83 Datasheet (PDF) |
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Overview: SavantIC Semiconductor Product Specification Silicon NPN Power.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BDW83C |
|---|---|
| Manufacturer | SavantIC |
| File Size | 175.06 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BDW83C BDW83 Datasheet (PDF) |
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·With TO-3PN package www.datasheet4u.com ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW83/83A/83B/83C/83D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER BDW83 BDW83A VCBO Collector-base voltage BDW83B BDW83C BDW83D BDW83 BDW83A VCEO Collector-emitter voltage BDW83B BDW83C BDW83D VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Ta=25 Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 100 120 45 60 80 100 120 5 15 0.5 150 3.5 150 -65~150 V A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDW83 BDW83A V(BR)CEO Collector-emitter breakdown voltage BDW83B BDW83C BDW83D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW83 BDW83A ICBO Collector cut-off current BDW83B BDW83C BDW83D BDW83 BDW83A ICEO Collector cut-off current BDW83B BDW83C BDW83D IEBO hFE-1 hFE-2 VEC ton toff Emitter cut-off current DC current gain DC current gain Diode forward voltage Turn-on time Turn-off time IC=6A ,IB=12mA IC=15A ,IB=150mA IC=6A ;
VCE=3V VCB=45V, IE=0 TC=150 VCB=60V, IE=0 TC=150 VCB=80V, IE=0 TC=150 VCB=100V, IE=0 TC=150 VCB=120V, IE=0 TC=150 VCE=30V, IB=0 VCE=30V, IB=0 VCE=40V, IB=0 VCE=50V, IB=0 VCE=60V, IB=0 VEB=5V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDW83C | NPN Transistor | INCHANGE |
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BDW83C | NPN power Darlington transistor | STMicroelectronics |
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BDW83C | NPN SILICON POWER DARLINGTONS | Bourns |
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BDW83C | NPN SILICON POWER DARLINGTONS | Comset Semiconductors |
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BDW83 | NPN SILICON POWER DARLINGTONS | Bourns |
| Part Number | Description |
|---|---|
| BDW83 | SILICON POWER TRANSISTOR |
| BDW83A | SILICON POWER TRANSISTOR |
| BDW83B | SILICON POWER TRANSISTOR |
| BDW83D | SILICON POWER TRANSISTOR |
| BDW84 | SILICON POWER TRANSISTOR |
| BDW84A | SILICON POWER TRANSISTOR |
| BDW84B | SILICON POWER TRANSISTOR |
| BDW84C | SILICON POWER TRANSISTOR |
| BDW84D | SILICON POWER TRANSISTOR |
| BDW42 | SILICON POWER TRANSISTOR |