BUH417D Description
VCE=5V IF=4A 8 6 MIN 700 .. BUH417D SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF TYP. MAX UNIT V 1.5 1.3 1.0 2.0 200 36 V V mA mA 2 V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER from junction to case MAX 2.27 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE.