BUH515D Overview
BUH515D SYMBOL VCEsat VBEsat ICES-1 ICES-2 IEBO hFE VF TYP. VCC=400V Fall time 170 260 ns 2.4 3.6 µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER from junction to case MAX 2.5 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE .. BUH515D Fig.2 Outline dimensions.

