Description
With TO-3 package - High voltage ,high speed APPLICATIONS - Power switching - Power amplification - power driver PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature Tmb=25 CONDITIONS Open emitter Open base Open collector VALUE 450 400 5 8 16 100 200 -65~200 UNIT V V V A A W SYMBOL Rth j-mb PARAMETER Free Datasheet http://..net/ SavantIC Semiconductor. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; L=25mH IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=450V; IE=0 TC=125 VCE=400V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=5V 10 MIN 400 2SC2244 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE TYP.
