C2738 Overview
Description
With TO-220C package - High speed switching - High VCBO - Low saturation voltage APPLICATIONS - For high speed switching applications PINNING PIN DE 1 2 3 Base Collector;connected to mounting base Emitter SCRIPTION SYMBOL P VCBO VCEO VEBO IC ICM C IB PC Tj Tstg ARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) ollector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 2 4 0.5 25 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 u nless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;L=25mH IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V 15 IC=1A ; VCE=5V 8 IC=0.2 A ; VCE=10V MIN 400 2SC2738 SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 1.0 1.5 100 100 V V µA µA 11 MHz Switching times ton ts tf Turn-on time Storage time Fall time VCC=100V ,IC=1A, IB1=-IB2=0.2A 1.0 3.0 1.0 µ µs µs s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2738 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3.
