C2752 Description
Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.3A; IB1=0.06A,L=10mH IC=300mA; VCE=5V 20 10 MIN 400 2SC2752 SYMBOL VCEO(SUS) VCEsat VBEsat ICEX IEBO hFE-1 hFE -2 TYP.