C3159 Overview
Description
With TO-220F package - High voltage - High switching speed APPLICATIONS - For switching regulator applications PINNING PIN DE 1 2 3 Base Collector Emitter Fig.1 s implified o utline ( TO-220F) a nd s ymbol SCRIPTION SYMBOL P VCBO VCEO VEBO IC ICM IB PC Tj Tstg ARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 10 20 3.5 80 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 u nless otherwise specified PARAMETER CONDITIONS MIN 2SC3159 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat C VBEsat B ICBO IEBO hFE-1 hFE-2 Collector-emitter breakdown voltage IC=10mA ; IB=0 400 IC=1mA ; IE=0 500 IE=1mA ; IC=0 7 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=400V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V 10 15 1.0 V Collector-base breakdown voltage V Emitter-base breakdown voltage V ollector-emitter saturation voltage V ase-emitter saturation voltage 1.2 V Collector cut-off current 10 µA Emitter cut-off current 10 µA DC current gain 80 DC current gain 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3159 Fig.2 outline dimensions 3.
