C5130 Overview
Description
With TO-220F package - High voltage. High speed switching APPLICATIONS - For switching regulator and general purpose applications PINNING PIN DE 1 2 3 Base Collector Emitter Fig.1 simplified o utline ( TO-220F) a nd s ymbol SCRIPTION SYMBOL P VCBO VCEO VEBO IC ICM IB PC Tj Tstg S ARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector dissipation Junction temperature torage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 600 400 10 5 10 2 30 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 u nless otherwise specified ARAMETER Collector-emitter breakdown voltage ollector-emitter saturation voltage ase-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain utput capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 400 IC=1.5A ;IB=0.3A IC=1.5A ;IB=0.3A VCB=500V; IE=0 VEB=10V; IC=0 IC=1.5A ; VCE=4V IE=0; VCB=10V;f=1MHz IC=-0.3A ; VCE=12V 10 MIN 2SC5130 SYMBOL P V(BR)CEO VCEsat C VBEsat B ICBO IEBO hFE COB O fT TYP.
