D1186 Datasheet | SavantIC

DESCRIPTION .. - With TO-3 package - High breakdown voltage - High speed switching APPLICATIONS - Power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 800 6 5 7 50 150 -45~150 UNIT V V V A A W Savant IC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1186 CHARACTERISTICS Tj=25 unless otherwise specified .. SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=10m A ;IC=0 V(BR)CEO Collector-emitter breakdown voltage IC=10m A ;RBE=7 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A ICES Collector cut-off...