D1729 Description
SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A VBEsat Base-emitter saturation voltage IC=3A;.
D1729 is 2SD1729 manufactured by SavantIC.
| Part Number | Description |
|---|---|
| D1710 | Silicon NPN Power Transistor |
| D1711 | 2SD1711 |
| D1739 | 2SD1739 |
SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=500mA; IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A VBEsat Base-emitter saturation voltage IC=3A;.