D1849 Overview
Description
With TO-3PFa package - High voltage,high speed - Built-in damper diode - Wide area of safe operation APPLICATIONS - Horizontal deflection output applications PINNING PIN DE 1 2 3 Base Collector Emitter SCRIPTION SYMBOL P VCBO VCEO VEBO IC ARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg junction temperature Storage temperature 120 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 7 3 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 u nless otherwise specified ARAMETER Emitter-base breakdown voltage ollector-emitter saturation voltage ase-emitter saturation voltage CONDITIONS IE=500mA ;IC=0 IC=6A; IB=1.4A IC=6A; IB=1.4A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE-1 hFE-2 fT VF DC current gain DC current gain Transition frequency Diode forward voltage IC=1A ; VCE=5V IC=6A ; VCE=10V 4 IC=1A ; VCE=10V;f=0.5MHz IC=7A 5 MIN 7 2SD1849 SYMBOL P V(BR)EBO VCEsat C VBEsat B TYP. MAX UNIT V 8.0 1.5 10 1.0 25 V V µA mA 2 2.0 MHz V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1849 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3.
