D817 Overview
Key Specifications
Description
With TO-3 package - High voltage ,high reliability - Wide area of safe operation APPLICATIONS - High voltage power switching TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 6 1.5 50 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD817 SYMBOL TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=1.2A; IB=0.3A 5.0 V VBEsat Base-emitter saturation voltage IC=1.2A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=800V;IE=0 10 µA IEBO Emitter cut-off current VEB=6V; IC=0 10 µA hFE DC current gain IC=0.3A ; VCE=5V 10 30 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD817 Fig.2 Outline dimensions 3.
