MJ15002 Overview
Description
With TO-3 package - Complement to type MJ15001 - Excellent safe operating area APPLICATIONS - For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -15 -5 20 250 200 -65~200 UNIT V V V A A A W SYMBOL Rth j-c PARAMETER SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN MJ15002 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-2V VCE=-140V; IB=0 VCE=-140V; VBE(off)=-1.5V TC=150 VEB=-5V; IC=0 IC=-4A ; VCE=-2V VCE=-40Vdc,t=1 s, Nonrepetitive -140 V VCE(sat) VBE ICEO ICEX IEBO hFE Collector-emitter saturation voltage -1.0 V Base-emitter on voltage -2.0 V Collector cut-off current -0.25 -0.1 -2.0 -0.1 mA Collector cut-off current mA Emitter cut-off current mA DC current gain 25 150 -5 A Is/b Second breakdown collector current With base forward biased VCE=-100Vdc,t=1 s, Nonrepetitive -0.5 COB fT Output capacitance IE=0 ; VCB=-10V;f=1.0MHz IC=-0.5A ; VCE=-10V;f=0.5MHz 2 1000 pF Transition frequency MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJ15002 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3.
