MJE13004 Overview
Key Specifications
Max Operating Temp: 150 °C
Description
With TO-220C package - High voltage ,high speed APPLICATIONS - Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-PeaK Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 CONDITIONS Open emitter Open base Open collector VALUE 600 300 9 4 8 2 4 2 75 150 -65~150 UNIT V V V A A A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector outoput capacitance CONDITIONS IC=10mA ;IB=0 IC=1A; IB=0.2A IC=2A; IB=0.5A IC=4A;IB=1A IC=1A; IB=0.2A IC=2A ;IB=0.5A VCEV=600V; VBE=1.5V TC=100 VEB=9V; IC=0 IC=1A ; VCE=5V IC=2A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz IE=0; f=1MHz ; VCB=10V 10 8 4 MIN 300 MJE13004 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 ICEV IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 0.5 0.6 1.0 1.2 1.6 1.0 5.0 1.0 60 40 V V V V V mA mA MHz 65 pF Switching times td tr ts tf Delay time Rise time Storage time Fall time VCC=125V ,IC=2A IB1=-IB2=0.4A tp.
