MJF122 Overview
Description
With TO-220F package - DARLINGTON - High DC current gain - Low collector saturation voltage - Complement to type MJF127 APPLICATIONS - Designed for general–purpose amplifier and switching applications. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -65~150 Open emitter Open base Open collector CONDITIONS VALUE 100 100 5 5 8 120 30 W UNIT V V V A A mA SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=0.1A, IB=0 IC=3A ,IB=12mA IC=5A ,IB=20mA IC=3.0A ; VCE=3V VCB=100V, IE=0 VCE=50V, IB=0 VEB=5V; IC=0 IC=0.5A ; VCE=3V IC=3.0A ; VCE=3V IE=0 ; VCB=10V,f=0.1MHz 1000 2000 MIN 100 TYP.
