MJH10012 Overview
Description
With TO-3PN package - High voltage,high current - DARLINGTON APPLICATIONS - Automotive ignition - Switching regulator - Motor control applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Abolute SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 600 400 8 10 15 2 118 150 -55~150 UNIT V V V A A A W SYMBOL Rth j-C PARAMETER SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Diode forward voltage Storage time Fall time CONDITIONS IC=0.2A ;IB=0 IC=3A; IB=0.6A IC=6A; IB=0.6A IC=10A; IB=2A IC=6A; IB=0.6A IC=10A; IB=2A IC=10A ; VCE=6V VCB=600V; IE=0 VCE=400V; IB=0 VEB=6V; IC=0 IC=3A ; VCE=6V IC=6A ; VCE=6V IC=10A ; VCE=6V IF=10A 300 100 20 MIN 400 MJH10012 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 VF ts tf TYP. MAX UNIT V 1.5 2.0 2.5 2.5 3.0 2.8 1 1 40 V V V V V V mA mA mA 2000 3.5 15 15 V µs µs IC=6.0A ; VCC=12V IB1=IB2=0.3A 2 SavantIC Semiconductor Product Specification Silicon.
