Datasheet Details
| Part number | S2000AF1 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 265.70 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | S2000AF1_SavantIC.pdf |
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Overview: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000AFI ·Wit www.datasheet4u.
| Part number | S2000AF1 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 265.70 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | S2000AF1_SavantIC.pdf |
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h TO-3P(H)IS package ·High voltage ·Fast switching APPLICATIONS ·Horizontal deflection for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 10 8 15 50 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=100mA ;IB=0 IE=10mA ;IC=0 IC=4.5A ;IB=2.0A IC=4.5A ;IB=2.0A VCE=1500V;
VBE=0 TC=125 VEB=5V;
IC=0 IC=1A ;
| Part Number | Description |
|---|---|
| S2000AF | SILICON POWER TRANSISTOR |
| S2000A | SILICON POWER TRANSISTOR |
| S2000 | SILICON POWER TRANSISTOR |
| S2000N | SILICON POWER TRANSISTOR |
| S2055 | SILICON POWER TRANSISTOR |
| S2055A | SILICON POWER TRANSISTOR |
| S2055AF | SILICON POWER TRANSISTOR |
| S2055F | SILICON POWER TRANSISTOR |
| S2055N | SILICON POWER TRANSISTOR |