Description
With TO-3 package - plement to type 2N6285/6286/6287 - High DC current gain - DARLINGTON APPLICATIONS - For use in general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6282 2N6283 2N6284 Fig.1 simplified outline (TO-3) and symbol Collector SYMBOL PARAMETER 2N6282 VCBO Collector-base voltage 2N6283 2N6284 2N6282 VCEO Collector-emitter voltage 2N6283 2N6284 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base .DataSheet.net/ CONDITIONS VALUE 60 80 100 60 80 100 5 20 40 0.5 160 200 -65~200 UNIT Open emitter V V V A A A W SYMBOL Rth j-c PARAMETER Datasheet pdf - http://..co.kr/ SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6282 2N6283 2N6284 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6282 VCEO(SUS) Collector-emitter sustaining voltage 2N6283 2N6284 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6282 ICEO Collector cut-off current 2N6283 2N6284 2N6282 ICEX Collector cut-off current 2N6283 2N6284 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance IC=10A; IB=40mA IC=20A ;IB=200mA IC=20A ;IB=200mA IC=10A ; VCE=3V VCE=30V; IB=0 VCE=40V; IB=0 .DataSheet.net/ SYMBOL CONDITIONS MIN 60 TYP. MAX UNIT IC=0.2A ;IB=0 80 100 2.0 3.0 4.0 2.8 V V V V V 1.0 mA VCE=50V; IB=0 VCE=60V; VBE=-1.5V TC=150 VCE=80V; VBE=-1.5V TC=150 VCE=100V; VBE=-1.5V TC=150 VEB=5V; IC=0 IC=10A ; VCE=3V IC=20A ; VCE=3V IE=0; VCB=10V;f=1MHz 750 100 400 pF 0.5 5.0 0.5 5.0 0.5 5.0 2.0 18000 mA mA 2 Datasheet pdf - http://..co.kr/ SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6282 2N6283 2N6284 .DataSheet.net/ Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3 Datasheet pdf - http://..co.kr/.