Savantic 2N6436
Silicon PNP Power Transistors
DESCRIPTION
●With TO-3 package●High DC current gain
●Fast switching times
●Low collector saturation voltage
●Complement to type 2N6338~2N6341
APPLICATIONS
●For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PINDESCRIPTION
1 Base 2 Emitter 3 Collector F Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6436 VCBO Collector-base voltage 2N6437 2N6438 2N6436 VCEO Collector-emitter voltage 2N6437 2N6438 VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IBC Base current PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE -100 -120 -140 -80 -100 -120 -6 -25 -50 -10 200 200 -65