D998 Description
Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=5A; IB=0.5A IC=0.5A;VCE=5V VCB=120V; VCE=5V f=1MHz;VCB=10V 55 MIN 120 2SD998 SYMBOL...