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SSM9563 - P-Channel Enhancement Mode Power Mos.FET

General Description

The SSM9563 provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

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  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • Lower On-Resistance D REF. A C D E I H Date Code 9 5 6 3 G G D S Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 S Millimeter Min. Max. 13°TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Curren.

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Datasheet Details

Part number SSM9563
Manufacturer SeCoS Halbleitertechnologie GmbH
File Size 736.65 KB
Description P-Channel Enhancement Mode Power Mos.FET
Datasheet download datasheet SSM9563 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSM9563 Elektronische Bauelemente -6A, -40V,RDS(ON) 40m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SSM9563 provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9563 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOT-223 Features www.DataSheet4U.com * Simple Drive Requirement * Fast Switching Characteristic * Lower On-Resistance D REF. A C D E I H Date Code 9 5 6 3 G G D S Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 S Millimeter Min. Max. 13°TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.