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STT2605 - P-Channel Enhancement Mode Power MosFET

General Description

The STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

The STT2605 is universally used for all commercial-industrial applications.

Key Features

  • Fast Switching Characteristic.
  • Lower Gate Charge.
  • Small Footprint & Low Profile Package D D 5 S 4 D 6 Date Code 2605 REF. A A1 A2 c D E E1 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com Continuous Drain Current, (Note 3) Continuous Drain Current, (Note 3) Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Millimeter Min. Ma.

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Datasheet Details

Part number STT2605
Manufacturer SeCoS Halbleitertechnologie GmbH
File Size 545.54 KB
Description P-Channel Enhancement Mode Power MosFET
Datasheet download datasheet STT2605 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT2605 Elektronische Bauelemente -4.0A, -30V,RDS(ON) 80m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2605 is universally used for all commercial-industrial applications. Features * Fast Switching Characteristic * Lower Gate Charge * Small Footprint & Low Profile Package D D 5 S 4 D 6 Date Code 2605 REF. A A1 A2 c D E E1 G 1 D 2 D 3 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.