SCS40STN Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 0.12 A, 40 V Silicon Epitaxial Planar Schottky Barrier Rectifiers Ro HS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection WBFBP-02C Features - - - - Low diode capacitance Low forward voltage Guard ring protected High breakdown voltage M B A E F APPLICATION - - -  REF. A B C D E F Millimeter Min. Max. 0.950 1.050 0.550 0.650 0.450 0.550 0.450 REF. 0.400 REF. 0.275 0.325 REF. G H J K L M  Millimeter Min. Max. 0.275 0.325 0.275 0.325 0.275 0.325 0.675 0.725 0.010 0.070 0.010 REF. Ultra high-speed switching Voltage clamping Mobile munication ,digital (still) cameras , PDAs and PCMCIA cards MARKING S6 PACKAGE INFORMATION Package WBFBP-02C MPQ 10K Leader Size 7 inch MAXIMUM RATINGS CHARACTERISTICS(TA=25°C unless otherwise specified) Parameter DC reverse voltage Forward continuous current Peak forward surge current @ Tp< 10ms Junction, Storage Temperature Range Symbol VR IF IFSM TJ, TSTG Limits 40 120 200 150, -55 ~ 150 Unit V m A m A...