SSG4394N Overview
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SSG4394N Key Features
- Typ. Static
- 4388 260 239 58 16 34 20 27 129 37
SSG4394N datasheet by SeCoS Halbleitertechnologie GmbH.
| Part number | SSG4394N |
|---|---|
| Datasheet | SSG4394N-SeCoSHalbleitertechnologie.pdf |
| File Size | 497.36 KB |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Description | N-Channel Enhancement Mode Power MOSFET |
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These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
View all SeCoS Halbleitertechnologie GmbH datasheets
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