SSN3541 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 0.1 A, 30 V, RDS(ON) 8 Ω N Channel Enhancement MOSFET Ro HS pliant Product A suffix of “-C” specifies halogen & lead-free Features Low on-resistance Fast switching speed Drive circuits can be simple Parallel use is easy Low voltage drive makes this device ideal for portable equipment SOT-723 1 GATE 2 SOURCE 3 DRAIN APPLICATION Interfacing Switching MARKING REF. KN PACKAGE INFORMATION Package SOT-723 MPQ 8K Leader Size 7 inch A B C D E Millimeter Min. Max. 1.150 1.250 0.750 0.850 0.500 1.150 1.250 0.800TYP. REF. F G H I Millimeter Min. Max. 0.170 0.270 0.270 0.370 0 0.050 0.150 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Total Power Dissipation Thermal Resistance Junction-ambient Operating Junction & Storage Temperature Range Notes: 1. Pw≤10µs ,Duty cycle≤1% Symbol VDS VGS ID PD RθJA TJ, TSTG Ratings 30 ±20 100 0.15 833 150, -55~150 Unit V V m A W ° C/W ° C http://.Se Co SGmb H./ Any changes of specification will not be informed individually. 09-Aug-2012 Rev. A Page 1 of 3 Elektronische Bauelemente 0.1 A, 30 V, RDS(ON) 8 Ω N Channel Enhancement...