SSPS924NE Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 9.2A , 20V , RDS(ON) 12 mΩ N-Ch Enhancement Mode Power MOSFET Ro HS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. DFN3x3-8PP Features Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology e E θ A d b g APPLICATION DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package DFN3x3-8PP MPQ 3K Leader Size 13 inch REF. A B C D E F G Top View Millimeter Min. Max. 0.70 0.90 3.00BSC 0.10 0.25 1.80 2.3 3.2BSC 0.01 0.02 2.35BSC REF. θ b d e g Millimeter Min. Max. 0° 12° 0.20 0.40 0.65BSC 3.00BSC 0.70(TYP.) MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25° C TA=70° C ID IDM IS PD TJ, TSTG Ratings 20 ±8 9.2 7.5 50 2.6 1.5 1 -55~150 Unit V V A A A A W W ° C Continuous Source Current (Diode Conduction) Total Power Dissipation TA=25° C TA=70°...