Datasheet4U Logo Datasheet4U.com

STT3808NE - N-Channel MOSFET

Key Features

  • Low rDS(on) trench technology Low thermal impedance Fast switching speed A E TSOP-6 L 6 5 4 Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STT320 Thyristor-Thyristor Modules Sirectifier Semiconductors
STT3402N N-Channel MOSFET SeCoS
STT3405P P-Channel MOSFET SeCoS
STT3414 N-Channel MOSFET SamHop Microelectronics
STT3416 N-Channel Logic Level Enhancement Mode Field Effect Transistor SamHop Microelectronics

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
STT3810N N-Channel MOSFET
STT3922N N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STT3808NE Elektronische Bauelemente 6A , 20V , RDS(ON) 20 mΩ N-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed A E TSOP-6 L 6 5 4 Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones Fast switch GPS Units and Media Players 1 2 3 B F DG K C H J PACKAGE INFORMATION Package TSOP-6 MPQ 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.