SUM6K1N Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 0.1A , 30V , RDS(ON) 8  N-Channel Enhancement Mode MOSFET Ro HS pliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. SOT-363 Features - B - - - Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-363 saves board space Fast switching speed High performance trench technology F DG K APPLICATION DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless telephones. REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.10 1.50 0.10 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 8° 0.650 TYP. MARKING K1 PACKAGE INFORMATION Package SOT-363 MPQ 3K Leader Size 7...