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SUM6K1N - N-Channel MOSFET

Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.

Features

  • B.
  • Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-363 saves board space Fast switching speed High performance trench technology F DG K C H J.

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Datasheet Details

Part number SUM6K1N
Manufacturer SeCoS Halbleitertechnologie
File Size 242.38 KB
Description N-Channel MOSFET
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SUM6K1N Elektronische Bauelemente 0.1A , 30V , RDS(ON) 8  N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A E SOT-363 L FEATURES  B    Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-363 saves board space Fast switching speed High performance trench technology F DG K C H J APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. REF. A B C D E F Millimeter Min. Max. 1.80 2.20 1.
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