SeCoS Halbleitertechnologie GmbH 2N3906
PNP Transistor
| Part No. | 2N3906 |
|---|---|
| Datasheet | 2N3906 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
● Power Dissipation PCM: 625mW (Ta=25°C)● Collector Current ICM: -200mA
● Collector – Base Voltage V(BR)CBO: -40V TO-92 AD B CLASSIFICATION OF hFE Product-Rank 2N3906-O Range 100~200 2N3906-Y 200~300 E CF Collector
● Base Emitter GH Emitter Base J
●Collector REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified) Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current -Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -40 -40 -5 -0.2 625 150, -55~150 Unit V V V A mW °C ELEC
