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2N4401 Datasheet PDF

SeCoS Halbleitertechnologie GmbH 2N4401

NPN Transistor

Part No. 2N4401
Datasheet 2N4401 Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description NPN Transistor
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2N4401 datasheet page 1 preview

FEATURES

4.55±0.2 3 . 5 ±0. 2 4.5±0.2 Power Dissipation

MAXIMUM RATINGS

* TA=25 oC unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6V IC Collector Current -Continuous 600 mA PC* TJ Collector Power dissipation Junction Temperature 0.625 150 W oC Tstg Storage Temperature -55to +150 oC RθJA Thermal Resistance, junction to Ambient 357 oC /mW 14.3±0.2 0 .4 6 +– 00..11 0 . 4 3 +– 00.. 0078 (1.27 Typ.) 123 1.25+–00..22 2.54±0.1 1: Emitter 2: Base 3: Collector

ELECTRICAL CHARACTERISTICS

( Tamb=25oC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output Capacitance Delay time Rise time Storage time Fall time Symbol V(BR)CBO V(BR)CE...
2N4401 page 2 preview