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2N4403 - PNP Transistor

Key Features

  • Power Dissipation 4.55±0.2 3 . 5 ±0. 2 4.5±0.2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente 2N4403 PNP Transistor Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power Dissipation 4.55±0.2 3 . 5 ±0. 2 4.5±0.2 MAXIMUM RATINGS* TA=25oC unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -40 V -5 V IC Collector Current -Continuous -600 mA PC * Collector Power dissipation 0.625 W TJ Tstg RθJA Junction Temperature Storage Temperature Thermal Resistance, junction to Ambient 150 -55to +150 357 oC oC oC /mW 14.3±0.2 0 .4 6 +– 00..11 0 . 4 3 +– 00.. 0078 (1.27 Typ.) 123 1.25+–00..22 2.54±0.