SeCoS Halbleitertechnologie GmbH 2N4403
PNP Transistor
FEATURES
Power Dissipation 4.55±0.2 3 . 5 ±0. 2 4.5±0.2MAXIMUM RATINGS
* TA=25oC unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -40 V -5 V IC Collector Current -Continuous -600 mA PC * Collector Power dissipation 0.625 W TJ Tstg RθJA Junction Temperature Storage Temperature Thermal Resistance, junction to Ambient 150 -55to +150 357 oC oC oC /mW 14.3±0.2 0 .4 6 +– 00..11 0 . 4 3 +– 00.. 0078 (1.27 Typ.) 123 1.25+–00..22 2.54±0.1 1: Emitter 2: Base 3: CollectorELECTRICAL CHARACTERISTICS
(Tamb=25oC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector capacitance Delay time Rise time Storage time Fall time Symbol Test conditions V(BR)CBO V(BR)CEO V...