SeCoS Halbleitertechnologie GmbH 2SA1576F
PNP Silicon General Purpose Transistor
| Part No. | 2SA1576F |
|---|---|
| Datasheet | 2SA1576F Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Silicon General Purpose Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
at Ta = 25к Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 -60 -50 -6 -150 225 Unit ć ć V V V mA mW Characteristics at Ta = 25к Parameter Collector -Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter -Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter -Base Cutoff Current Collector Saturation Voltage 1 DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min -60 -50 -6 120 - Typ. 140 4.0 Max -100 -100 -500 560 5.0 Unit V V V nA nA mV MHz pF Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IE=-2 mA, f=100MHz VCB=-12V, f=1MHz, IE=0 *Pulse Test: Pulse Width = 380us, Duty Cycle = 2% Classification of hFE Rank Q R S Range 120 - 270 180 - 390 270 - 560 Any changing of specification will not be informed individual 01-Jun-2002 Rev.
