SeCoS Halbleitertechnologie GmbH 2SA733T
PNP Transistor
| Part No. | 2SA733T |
|---|---|
| Datasheet | 2SA733T Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
Power dissipation G H TO-92 1Emitter 2Collector 3Base PACKAGE INFORMATION Weight: 0.2100g (Approximately) A J D B REF. Collector 2 K 3 Base E C F 1 Emitter A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76ABSOLUTE MAXIMUM RATINGS
(TA = 25℃ Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Total Power Dissipation Junction, Storage Temperature unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -60 -50 -5 -100 250 +150, -55 ~ +150 Unit V V V mA mW ℃ELECTRICAL CHARACTERISTICS
(TA = 25℃ Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE hFE fT Cob NF (noise figures) unless otherwise specified) Min. -60 -50 -5 -0.58 90 100 - Typ. -0.18 -0.62 200 - Max. -100 -100 -0.30 -0.68 600 6 20 Unit V V V nA nA V V MHz pF dB IC=-50uA, IE = 0 IC=-1mA, IB = 0 IE=-50uA, IC = 0 VCB=-60V, IE = 0 VEB=-5V, IC = 0 Test Conditions IC=-100...