SeCoS Halbleitertechnologie GmbH 2SA950
PNP Transistor
| Part No. | 2SA950 |
|---|---|
| Datasheet | 2SA950 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
● 1W output applications● Complementary to 2SC2120 CLASSIFICATION OF hFE (1) Product-Rank 2SA950-O 2SA950-Y Range 100-200 160-320 GH J AD B K E CF TO-92 Emitter Collector
●Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76
● Base Collector Emitter
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG -35 -30 -5 -0.8 600 150, -55~150 Unit V V V A mW °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -35 - - V IC= -0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)...