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2SB1424 - PNP Silicon Medium Power Transistor

Key Features

  • Symbol Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 Power dissipation : 600 mW Temp. =25 PCM Collector current : -3 A ICM Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range TJ Tstg: -55 to +150.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1424 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free D D1 A PNP Silicon Medium Power Transistor     E1 b1 1.BASE SOT-89  b L 2.COLLECTOR  3. EMITTER E e e1 C FEATURES Symbol Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 Power dissipation : 600 mW Temp.