SeCoS Halbleitertechnologie GmbH 2SB764L
PNP Transistor
| Part No. | 2SB764L |
|---|---|
| Datasheet | 2SB764L Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(at TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector-Base Breakdown Voltage V(BR)CBO -60 - - Collector-Emitter Breakdown Voltage V(BR)CEO -50 - - Emitter-Base Breakdown Voltage V(BR)EBO -5 - - Collector Cut-off Current ICBO - - -1 Emitter Cut-off Current IEBO - - -1 DC Current Gain hFE(1) hFE(2) 60 30 - 320 -- Collector-Emitter Saturation Voltage VCE(sat) - - -0.7 Base-Emitter Voltage VBE - - -1.2 Transition Frequency fT - 150 - Collector Output Capacitance COB - 20 - Unit V V V μA μA V V MHz pF Test Conditions IC = -10μA, IE = 0 IC = -1mA, IB = 0 IE = -10μA, IC = 0 VCB = -50V, IE = 0 VEB = -5V, IC = 0 VCE = -2V, IC = -0.05A VCE = -2V, IC = -1A IC = -0.5A, IB = -0.05A IC = -0.5A, IB = -0.05A VCE = -10V, IC = -0.05A VCB = -10V, IE = 0, f = 1 MHz CLASSIFICATION OF hFE(1) Rank Range D 60 - 120 E 100 - 200 F 160 - 320 01-April-2009 Rev. A Page 1 of 3 Elektronische Bauelemente CHARACTERISTIC CURVES 2SB764L PNP Plastic Encapsulated Transistor 2SB764L 01-April-2009 Rev.
