DESCRIPTION
5.6±0.2 TO-251 6.6±0.2 5.3±0.2 2.3±0.1 0.5±0.05 7.0±0.2 7.0±0.2 1.2±0.3 0.75±0.15 0.6±0.1 G 2.3REF. DS 0.5±0.1 MAXIMUM RATINGS
* (Tamb =25oC, unless otherwise specified) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) Collector Current (Pulse) IB Base Current PD Total Power Dissipation TJ,Tstg Junction and Storage Temperature Dimensions in millimeters Value -40 -30 -5 -3 -7 -0.6 10 -55~+150 Units V V V A A W CO ELECTRICAL CHARACTERISTICS
Tamb=25oC Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cut
SeCoS Halbleitertechnologie GmbH
