DESCRIPTION
PACKAGE DIMENSIONS REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. ABSOLUTE MAXIMUM RATINGS
at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pd TJ, TSTG Ratings 60 50 5 150 250 +150, -55 ~ +150 Unit V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat)1 *hFE1 *hFE2 *hFE3 fT Cob Min. 60 50 5 90 25 80 80 - Typ. - Max. 100 100 250 1.0 600 3.5 Unit V V V nA nA mV V IC=100uA IC=1mA IE=10uA VCB=60V VEB=5V Test Conditions IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=150mA VCE=1V, IC=10mA MHz pF VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz, IE=0A * Pulse Test: Pulse Width≦380μs, Duty Cycle≦2% CLASSIFICATION OF hFE1 Rank Range P 90 - 180 Y 135 - 270 G 200 - 400 B 300 - 600 01-June-2002 Rev.
SeCoS Halbleitertechnologie GmbH
