SeCoS Halbleitertechnologie GmbH 2SC1983L
NPN Silicon General Purpose Transistor
| Part No. | 2SC1983L |
|---|---|
| Datasheet | 2SC1983L Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Silicon General Purpose Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
(Tamb=25℃ Parameter Collector-base breakdown voltage 2SC1383L 2SC1384L Collector-emitter breakdown voltage 2SC1383L 2SC1384L Emitter-base breakdown voltage Collector cut-off current unless Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE(1) otherwise Test specified) MIN 30 60 25 50 5 0.1 85 50 0.4 1.2 100 V V MHz 340 MAX UNIT V V V µA conditions Ic= 10µA , IE=0 IC=2mA , IB=0 IE= 10µA, IC=0 VCB=20V , VCE=10 V, VCE=5 V, IE=0 IC= 500mA IC= 1A DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) IC= 500m A, IB=50mA IC= 500mA , IB= 50mA fT VCE= 10 V, IC= 50mA CLASSIFICATION OF hFE(1) Rank Range Q 85-170 R 120-240 S 170-340 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2SC1383L/2SC1384L Elektronische Bauelemente NPN Silicon General Purpose Transistor PC Ta 1.2 1.50 IC VCE Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 0.50 IC I B 1.2 VCE...
