SeCoS Halbleitertechnologie GmbH 2SC2235
NPN Silicon General Purpose Transistor
FEATURES
Complementary to 2SA965 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 6.0±0.2 TO-92 MOD 4 . 9 ±0. 2 8.6±0.2MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VBCBOB VBCEOB VBEBOB ICB B PCB B TJB B TBstgB Parameter Collector-Base Voltage Collector-EmB iB tter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 120 120 5 0.8 0.9 150 -55to+150 Units V V V A W ℃ ℃ 1.0±0.1 2 . 0 –+00.. 32 14±0.2 0 . 5 0 +0 . 1 –0.1 0 . 4 5 +– 00..11 (1.50 Typ.) 123 1.9 +–00..11 3.0±0.1 1: Emitter 2: Collector 3: Base Unit: mmELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN Collector-base breakdown voltage VB(BR)CBOB IBCB=1mA,IBEB=0 120 Collector-emitter breakdown voltage VB(BR)CEOB IBCB=10mA,IBBB=0 120 Emitter