SeCoS Halbleitertechnologie GmbH 2SC2412K
NPN Silicon General Purpose Transistor
FEATURES
n A L 3 Top View SC-59 Dim A Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 Low Cob. Cob=2.0pF Compements the 2SA1037K RoHS Compliant Product S n n n 2 B 1 B C D STRUCTURE G n n D G H C J K Expitaxial planar type NPN Silicon Teansistor H J K L 3 Collector Base 2 1 Emitter S All Dimension in mm !Absolute maximum (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 60 50 7 0.15 Unit V V V A Collector power dissipation PC 0.2 W °C °C Junction temperature Storage temperature Tj Tstg 150 −55~+150 !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 50...