SeCoS Halbleitertechnologie GmbH 2SC2655L
NPN Transistor
| Part No. | 2SC2655L |
|---|---|
| Datasheet | 2SC2655L Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A) High speed switching time：tstg=1µs(Typ.) CLASSIFICATION OF hFE (1) Product-Rank 2SC2655L-O Range 70-140 2SC2655L-Y 120-240 TO-92L GH 1 Emitter 2 Collector 3 Base J AD B K E CF Collector 2 3 Base 1ABSOLUTE MAXIMUM RATINGS
(TA =25°C unless otherwise specified) Emitter Parameter Symbol Rating REF. A B C D E Millimeter Min. Max. 4.70 5.10 7.80 8.20 13.80 14.20 3.70 4.10 0.35 0.55 REF. F G H J K Millimeter Min. Max. 0.35 0.45 1.27 TYP. 1.28 1.58 2.44 2.64 0.60 0.80 Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 50 50 5 2 0.9 -55~150 V V V A W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 50 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 50 -...