SeCoS Halbleitertechnologie GmbH 2SC2878A
NPN Transistor
| Part No. | 2SC2878A |
|---|---|
| Datasheet | 2SC2878A Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
Low On Resistance High Emitter-Base Voltage High Reverse hFE>30(typ.) VCE= -2V, IC= -4mA. TO-92 Collector 2 1 Emitter 2 Collector 3 Base 3 Base 1 Emitter REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 14.5 3.30 3.81 0.36 0.56 REF. F G H J Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Junction and Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG Rating 50 20 15 300 400 150, -55~150 Unit V V V mA mW °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage V(BR)CBO V(BR)CEO 50 20 - - Emitter to Base Breakdown Voltage V(BR)EBO 15 - - Collector Cut – Off Current ICBO - - 0.1 Emitter Cut – Off Current DC Current Gain IEBO - -...