SeCoS Halbleitertechnologie GmbH 2SC3356F
NPN Transistor
FEATURES
Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 2 Emitter A 3 L 3 Collector 3 Top View 1 2 C B 1 2 K E D 1 MARKING R = hFE Coding Base F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H J REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP.ABSOLUTE MAXIMUM RATINGS
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings 20 12 3 0.1 200 150, -55~150 Unit V V V A mW °CELECTRICAL CHARACTERISTICS
Parameter Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Collector Output Capacitance (TA = 25°C unless otherwise noted) Symbol BVCBO BVCEO ICBO IEBO hFE* fT NF Min. 20 12 50 - Typ. 7 - Max. 1 1 25...